Reliability of 3D Memories Using Orthogonal Latin Square codes Articles uri icon

publication date

  • March 2019

start page

  • 74

end page

  • 80

volume

  • 95

International Standard Serial Number (ISSN)

  • 0026-2714

Electronic International Standard Serial Number (EISSN)

  • 1872-941X

abstract

  • Radiation is a cause of errors in electronics systems, especially on those deployed in space. Memories can suffer from different radiation effects including Single Event Upsets and Multiple Cell Upsets. These effects produce corruption of data and may cause a system malfunction. 3D die-stacked memories have been designed to increase bandwidth, reduce latency and limit power consumption. The shielding characteristic of the 3D structure causes a heterogeneous fault tolerance behaviour of the system where some of the inner dies are invulnerable while the outer dies require different protection levels. Orthogonal Latin Square codes are a class of error correcting codes that are modular and can provide different error correction degrees depending on the number of parity bits used. This paper proposed a solution based on current standards to provide dynamic and heterogeneous error correction capabilities to a 3D memory. To do so, Orthogonal Latin Square codes are used.

subjects

  • Telecommunications

keywords

  • 3d memories; error correction; single event upset; fault tolerant systems