Simulation of memristors in presence of high-frequency forcing function Articles uri icon

publication date

  • July 2012

start page

  • 684

end page

  • 686

issue

  • 12

volume

  • 48

International Standard Serial Number (ISSN)

  • 0013-5194

Electronic International Standard Serial Number (EISSN)

  • 1350-911X

abstract

  • This reported work is concerned with the simulation of memristors when they are subject to high-frequency forcing functions. A novel asymptotic-numeric simulation method is applied. For systems involving high-frequency signals or forcing functions, the superiority of the proposed method in terms of accuracy and efficiency when compared to standard simulation techniques is illustrated. Relevant dynamical properties in relation to the method are also considered.