Nanoscale Research Letters Journal

Overview

abbreviation

NANOSCALE RES LETT

publication venue for

Sb and N Incorporation Interplay in GaAsSbN/GaAs Epilayers near Lattice-Matching Condition for 1.0-1.16-eV Photonic Applications. 1:356. 2017
Microwave-induced resistance oscillations and zero resistance states in 2D bilayer systems. 8. 2013
Off-resonance magnetoresistance spike in irradiated ultraclean 2D electron system. 8:1-4. 2013

International Standard Serial Number (ISSN)

1931-7573

Electronic International Standard Serial Number (EISSN)

1556-276X