Microwave-induced resistance oscillations and zero resistance states in 2D bilayer systems Articles
Overview
published in
- Nanoscale Research Letters Journal
publication date
- May 2013
issue
- 259
volume
- 8
Digital Object Identifier (DOI)
International Standard Serial Number (ISSN)
- 1931-7573
Electronic International Standard Serial Number (EISSN)
- 1556-276X
abstract
- We report on theoretical studies of recently obtained experimental results on microwave-induced resistance oscillations and zero resistance states in Hall bars with two occupied subbands. In these experiments, resistance presents a peculiar shape which appears to have a built-in interference effect not observed before. We apply the microwave-driven electron orbit model, which implies a radiation-driven oscillation of the two-dimensional electron system. Thus, we calculate different intra- and inter-subband electron scattering rates revealing different microwave-driven oscillations frequencies for the two electronic subbands. Calculated results are in good agreement with experiments.
Classification
keywords
- bilayer systems; microwaves; magnetoresistance; keywords plus; electromagnetic-wave excitation; gaas/algass heterostructures