Effect of the Deposition Time and Heating Temperature on the Structure of Chromium Silicides Synthesized by Pack Cementation Process

Transition metal silicides have attracted great interest for their potential use in optoelectronic devices, photovoltaic cells, and thermoelectric conversion elements because of their high melting point, high oxidation resistance, and satisfactory thermoelectric properties. This study focuses on the effect of the deposition time and the heating temperature on the morphology and structure of the chromium silicides synthesized by the pack cementation method. A series of experiments were carried out at various temperatures (1000-1150 °C) with different deposition times (15-120 min). The morphology and the chemical composition of the samples were determined using SEM with an EDS analyzer. The structure determination and phase identification were performed by XRD analysis. The examination of the as-formed materials was completed by performing thermal stability tests. The most suitable conditions for producing CrSi2 sample with satisfactory properties and simultaneously minimizing the cost and production time are listed. It was found that the sample synthesized at 1000 °C for 15 min during the chromizing step, in combination with the siliconizing step at 1000 °C for 60 min, presents the best thermal stability and these selected temperatures offer appropriate, economical, and repeatable results.

Effect of the Deposition Time and Heating Temperature on the Structure of Chromium Silicides Synthesized by Pack Cementation Process Articles