Tuning the metal-insulator transition temperature by the controlled generation of oxygen vacancies on La0.7Ca0.3MnO3-x epitaxial thin films Articles uri icon

authors

  • SALAS COLERA, EDUARDO
  • MUÑOZ NOVAL, ALVARO
  • SEBASTIANI TOFANO, EUGENIA
  • CASTRO, GERMAN R.
  • RUBIO ZUAZO, JUAN

publication date

  • June 2024

start page

  • 1

end page

  • 6

issue

  • 174321

volume

  • 989

International Standard Serial Number (ISSN)

  • 0925-8388

Electronic International Standard Serial Number (EISSN)

  • 1873-4669

abstract

  • This report presents a study on the effect of the controlled generation of oxygen vacancies on the electronic transport properties of La0.7Ca0.3MnO3-x epitaxial thin films. Oxygen defects cause signifcant changes in the crystalline structure of mixed-valence manganites and lower the Mn valence, resulting in a shift of the metalinsulator transition to lower temperatures due to modifications in the angles and lengths of Mn-O bonds. Experiments using Polarized Extended X-Ray Absorption Fine Structure Spectroscopy have provided strong evidence that oxygen vacancies are mainly formed in the basal plane of the MnO6 octahedra. The accurate control of oxygen vacancies generation opens possibilities for managing and enhancing the magneto-electronic properties of epitaxial manganite thin films with potential in industrial applications.

subjects

  • Chemistry
  • Materials science and engineering
  • Renewable Energies

keywords

  • oxygen vacancies; mixed valence manganites; electronic properties; metal-insulator transition; polarized exafs