Femtosecond pulse and terahertz two-tone generation from facet-free multi-segment laser diode in InP-based generic foundry platform Articles uri icon

publication date

  • July 2018

start page

  • 18386

end page

  • 18398

issue

  • 14

volume

  • 26

International Standard Serial Number (ISSN)

  • 1094-4087

abstract

  • In this paper, a monolithically integrated similar to 1.55 mu m semiconductor laser in the fourth harmonic colliding pulse mode locking configuration is reported. This device was developed within a multi-project wafer run at an InP-based active-passive generic foundry. The 1.66-mm Fabry-Perot cavity is formed with two on-chip reflector building blocks rather than cleaved facets. In the cavity, three absorber sections symmetrically divide the cavity in four gain segments. This laser diode is able to emit 100-GHz pulse trains with 500-fs pulse duration as well as two-tone emissions with a frequency separation of 2.7 THz. The dependence of the spectral behavior on the forward bias current for gain sections and the reverse bias voltage for absorber sections are experimentally demonstrated. (C) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

subjects

  • Electronics

keywords

  • mode-locked lasers; semiconductor lasers; photonic integrated circuits