170 GHz uni-traveling carrier photodiodes for InP-based photonic integrated circuits Articles uri icon

publication date

  • August 2012

start page

  • 20090

end page

  • 20095

issue

  • 18

volume

  • 20

International Standard Serial Number (ISSN)

  • 1094-4087

abstract

  • We demonstrate the capability of fabricating extremely high-bandwidth Uni-Traveling Carrier Photodiodes (UTC-PDs) using techniques that are suitable for active-passive monolithic integration with Multiple Quantum Well (MQW)-based photonic devices. The devices achieved a responsivity of 0.27 A/W, a 3-dB bandwidth of 170 GHz, and an output power of -9 dBm at 200 GHz. We anticipate that this work will deliver Photonic Integrated Circuits with extremely high bandwidth for optical communications and millimetre-wave applications.