Electronic International Standard Serial Number (EISSN)
1879-0259
abstract
In order to meliorate the photocatalytic performance of materials, semiconductor heterojunction construction and engineering of vacancies/defects has been a successful strategy for advanced wastewater treatment. Herein, a sulfur vacancies rich S-scheme heterojunction was constructed by incorporating MIL-88B(Fe) and Cu7S4 was constructed by in-situ hydrothermal method. The optimized MIL-88B(Fe)(20 wt%)/Cu7S4 (20MCS) heterojunction exhibited superior photocatalytic activity with 94.3 % TC (20 mg L− 1) removal within 90 min. The Sscheme heterojunction facilitates efficient charge carriers" separation, interfacial charge transfer facilitated by sulfur vacancies with high photo-redox capability as determined by EIS, TPCR band analysis and PL experiments. The in-situ XPS findings and UPS (work function determination) were used as direct experimental evidence for the S-scheme route and the existence of sulfur defects was confirmed by electron paramagnetic resonance (EPR). The prepared heterojunction photocatalyst demonstrates excellent efficiency, stability, and adaptability to practical environmental conditions as tested in real water samples. The scavenging and ESR experiments disclosed that O2–• and • OH radicals were generated. The mechanism for TC degradation by 20MCS was also proposed based on analysis of degradation intermediates. This novel hybrid S-scheme heterojunction photocatalyst system is quite promising for high performance environmental remediation exhibiting both stability and remarkable activity