Photocarrier extraction in GaAsSb/GaAsN type-II QW superlattice solar cells Articles uri icon

publication date

  • May 2018

start page

  • 1

end page

  • 5

issue

  • 21

volume

  • 112

International Standard Serial Number (ISSN)

  • 0003-6951

Electronic International Standard Serial Number (EISSN)

  • 1077-3118

abstract

  • Photocarrier transport and extraction in GaAsSb/GaAsN type-II quantum well superlattices are
    investigated by means of inelastic quantum transport calculations based on the non-equilibrium
    Green"s function formalism. Evaluation of the local density of states and the spectral current flow
    enables the identification of different regimes for carrier localization, transport, and extraction as a
    function of configurational parameters. These include the number of periods, the thicknesses of the
    individual layers in one period, the built-in electric field, and the temperature of operation. The
    results for the carrier extraction efficiency are related to experimental data for different symmetric
    GaAsSb/GaAsN type-II quantum well superlattice solar cell devices and provide a qualitative
    explanation for the experimentally observed dependence of photovoltaic device performance on
    the period thickness.

subjects

  • Physics
  • Renewable Energies

keywords

  • electronic transport; density of states; phonons; semiconductors; superlattices; quantum wells; photovoltaics; solar cells