Influence of La3+ doping on nebulizer spray pyrolysed In2S3 thin film for enhanced photodetector performance Articles uri icon

authors

  • Alagarasan, Devarajan
  • Hegde, S. S.
  • Kumar, Anuj
  • Shanmugavelu, B.
  • Murahari, Prashantha
  • Ganesan, R.
  • Shetty, Hitha D.
  • Naik, R.
  • Ubaidullah, Mohd
  • PANDIT, BIDHAN
  • Gupta, Manish
  • Senthilkumar, Nangan
  • Sehgal, Satbir S.

publication date

  • October 2023

start page

  • 1

end page

  • 12

issue

  • 114941

volume

  • 444

International Standard Serial Number (ISSN)

  • 1010-6030

Electronic International Standard Serial Number (EISSN)

  • 1873-2666

abstract

  • In recent years, the photodetectors gained much attention due to their wide range of applications and fabrication of high-performance, cost-effective devices using environmentally friendly material is always challenging. In this work we report the fabrication of Lanthanum -doped indium sulfide thin films (In2S3:La) using a low-cost nebulizer spray pyrolysis method. La-doping concentration is varied from 0 to 5 wt% and the effect of doping on the properties of In2S3 thin films are investigated using X-ray diffraction (XRD), energy dispersive x-ray analysis (EDX), field emission scanning electron microscope (FESEM), UV–Vis spectroscopy, photoluminescence spectra. Incorporation of 3 wt% of La3+ in In2S3 lattice has substantially improved the crystallinity, surface morphology and optical properties of the thin films suitable for the device fabrication. Moderate doping of La3+ in the crystal lattice of β-In2S3 led to a red-shift in the absorption edge, which benefited utilization of wider light spectrum. Photodetectors are fabricated using In2S3:La (0–5 wt%) films and photodetector performance parameters are evaluated using I-V characteristics and current–time characterization. The In2S3 film with 3% La dopant concentration showed high photodetector performance with estimated detectivity (D*), photoresponsivity (R), and external quantum efficiency (EQE) of 1.11 × 1011 Jones, 5.05 × 10-1 AW−1, 118% respectively. For the same sample, the rise and fall time calculated from transient photo-response analysis is found to be 0.4 s and 0.3 s respectively. These optimally doped In2S3:La 3wt% thin film samples could be useful for the fabrication of photosensor based optoelectronic devices.

subjects

  • Chemistry

keywords

  • in2s3 thin film; la doped; nebulizer spray pyrolysis method; uv photodetector application