Terahertz-induced oscillations in encapsulated graphene Articles uri icon

publication date

  • May 2023

start page

  • 2200266-1

end page

  • 2200266-6


  • 5


  • 260

International Standard Serial Number (ISSN)

  • 0370-1972

Electronic International Standard Serial Number (EISSN)

  • 1521-3951


  • A theoretical study on the rise of photo-oscillations in the magnetoresistance of hexagonal boron nitride (hBN)-encapsulated graphene is presented. The previous radiation-driven electron orbit model devised to study the same oscillations, well-known as MIRO, in 2D semiconductor systems (GaAs/AlGaAS heterostructure) is used. It is obtained that these graphene platforms under radiation and a static magnetic field are sensitive to terahertz and far-infrared radiation. The power, temperature, and frequency dependences of the photo-oscillations are studied. For power dependence, it is predicted that for cleaner graphene and high enough power it is possible to observe zero-resistance states and a resonance peak.


  • Civil and Construction Engineering
  • Electronics
  • Materials science and engineering
  • Physics


  • hbn-encapsulated graphene; magnetoresistance; terahertz-induced oscillations