Plasmonic CdZnO nanoparticles for enhanced GaAs-based quantum well intersubband absorption Articles uri icon

authors

  • MARTINEZ CASTELLANO, EDUARDO
  • TAMAYO ARRIOLA, JULEN
  • MONTES BAJO, MIGUEL
  • GONZALO MARTIN, ALICIA
  • AGOURAM, SAID
  • STANOJEVIC, LAZAR
  • ULLOA, JOSE M.
  • KLYMOV, OLEKSSI
  • YESTE, JAVIER
  • MUÑOZ, ELIAS
  • MUÑOZ SANJOSE, VICENTE
  • HIERRO, ADRIAN

publication date

  • August 2021

start page

  • 11797q

volume

  • 11797

International Standard Serial Number (ISSN)

  • 0277-786X

Electronic International Standard Serial Number (EISSN)

  • 1996-756X

abstract

  • In this work we propose the use of self-assembled CdZnO nanoparticles as a route to improve power absorption in midinfrared GaAs-based quantum well infrared photodetectors (QWIPs). We experimentally demonstrate low temperature growth of CdZnO nanoparticles on GaAs and characterize their plasmonic response in the mid-IR. Computational analysis of the plasmonic resonances coupled to intersubband transitions in GaAs quantum wells show that intersubband absorption at normal incidence, forbidden by quantum selection rules, can be obtained. Gains in the quantum well power absorption as high as 5.5 are also reported.

subjects

  • Physics

keywords

  • absorption; plasmonics; quantum wells; nanoparticles; transmittance; gallium arsenide; mid-ir, photodetectors