Understanding phosphorus diffusion into silicon in a MOVPE environment for III-V on silicon solar cells Articles uri icon

publication date

  • September 2013

start page

  • 61

end page

  • 67


  • 116

International Standard Serial Number (ISSN)

  • 0927-0248

Electronic International Standard Serial Number (EISSN)

  • 1879-0248


  • Dual-junction solar cells formed by a GaAsP or GaInP top cell and a silicon bottom cell seem to be attractive candidates to materialize the long sought-for integration of III-V materials on silicon for photovoltaic applications. When manufacturing a multi-junction solar cell on silicon, one of the first processes to be addressed is the development of the bottom subcell and, in particular, the formation of its emitter. In this study, we analyze, both experimentally and by simulations, the formation of the emitter as a result of phosphorus diffusion that takes place during the first stages of the epitaxial growth of the solar cell. Different conditions for the Metal-Organic Vapor Phase Epitaxy (MOVPE) process have been evaluated to understand the impact of each parameter, namely, temperature, phosphine partial pressure, time exposure and memory effects in the final diffusion profiles obtained. A model based on SSupremIV process simulator has been developed and validated against experimental profiles measured by ECV and SIMS to calculate P diffusion profiles in silicon formed in a MOVPE environment taking in consideration all these factors.


  • Physics


  • multi-junction solar cell; iii-v on si; movpe; emitter formation; phosphorus diffusion