Integrated dual-laser photonic chip for high-purity carrier generation enabling ultrafast terahertz wireless communications Articles uri icon

authors

  • JIA, SHI
  • LO, MU CHIEH
  • ZHANG, LU
  • OZOLINS, OSKARS
  • UDALCOVS, ALEKSEJS
  • KONG, DEMING
  • PANG, XIAODAN
  • GUZMAN MARTINEZ, ROBINSON CRUZOE
  • YU, XIANBIN
  • XIAO, SHILIN
  • POPOV, SERGEI
  • CHEN, SIAJIA
  • CARPINTERO DEL BARRIO, GUILLERMO
  • MORIOKA, TOSHIO
  • HU, HAO
  • OXENLOWE, LEIF K.

publication date

  • March 2022

start page

  • 1388

issue

  • 13

Electronic International Standard Serial Number (EISSN)

  • 2041-1723

abstract

  • Photonic generation of Terahertz (THz) carriers displays high potential for THz communications with a large tunable range and high modulation bandwidth. While many photonics-based THz generations have recently been demonstrated with discrete bulky components, their practical applications are significantly hindered by the large footprint and high energy consumption. Herein, we present an injection-locked heterodyne source based on generic foundry-fabricated photonic integrated circuits (PIC) attached to a uni-traveling carrier photodiode generating high-purity THz carriers. The generated THz carrier is tunable within the range of 0 - 1.4THz, determined by the wavelength spacing between the two monolithically integrated distributed feedback (DFB) lasers. This scheme generates and transmits a 131 Gbits-1 net rate signal over a 10.7-m distance with -24 dBm emitted power at 0.4THz. This monolithic dual-DFB PIC-based THz generation approach is a significant step towards fully integrated, cost-effective, and energy-efficient THz transmitters.

subjects

  • Electronics