Integrated dual-laser photonic chip for high-purity carrier generation enabling ultrafast terahertz wireless communications Articles uri icon

authors

  • JIA, SHI
  • LO, MU CHIEH
  • ZHANG, LU
  • OZOLINS, OSKARS
  • UDALCOVS, ALEKSEJS
  • KONG, DEMING
  • PANG, XIAODAN
  • GUZMAN MARTINEZ, ROBINSON CRUZOE
  • YU, XIANBIN
  • XIAO, SHILIN
  • POPOV, SERGEI
  • CHEN, SIAJIA
  • CARPINTERO DEL BARRIO, GUILLERMO
  • MORIOKA, TOSHIO
  • HU, HAO
  • OXENLOWE, LEIF K.

publication date

  • March 2022

start page

  • 1388

Electronic International Standard Serial Number (EISSN)

  • 2041-1723

abstract

  • Photonic generation of Terahertz (THz) carriers displays high potential for THz communications with a large tunable range and high modulation bandwidth. While many photonics-based THz generations have recently been demonstrated with discrete bulky components, their practical applications are significantly hindered by the large footprint and high energy consumption. Herein, we present an injection-locked heterodyne source based on generic foundry-fabricated photonic integrated circuits (PIC) attached to a uni-traveling carrier photodiode generating high-purity THz carriers. The generated THz carrier is tunable within the range of 0–1.4 THz, determined by the wavelength spacing between the two monolithically integrated distributed feedback (DFB) lasers. This scheme generates and transmits a 131 Gbits−1 net rate signal over a 10.7-m distance with −24 dBm emitted power at 0.4 THz. This monolithic dual-DFB PIC-based THz generation approach is a significant step towards fully integrated, cost-effective, and energy-efficient THz transmitters.