Multipage read for NAND flash Articles uri icon

publication date

  • April 2016

start page

  • 76

end page

  • 80


  • 1


  • 64


  • NAND flash memories achieve very high densities through a series connection of all cells in a bitline. In current memories, each wordline is read independently by biasing all the other cells to act as pass transistors and sensing all the bitlines in parallel. This brief proposes a new method that reads multiple wordlines simultaneously and returns a combination of their stored information. This multipage read method is shown to be useful for equalizing the intercell interference, reduce the damage caused by erase operations, and speed up the decoding of a certain class of codes.


  • intercell interference (ici) equalization; memory architecture; nand flash memory; write-once-memory (wom) codes