Radiation-induced magnetoresistance oscillations with massive Dirac fermions Articles uri icon

publication date

  • June 2021

start page

  • 1

end page

  • 10


  • 6, 063004


  • 23

International Standard Serial Number (ISSN)

  • 1367-2630


  • We report on a theoretical study on the rise of radiation-induced magnetoresistance oscillations in two-dimensional (2D) systems of massive Dirac fermions.We study the bilayer system of
    monolayer graphene and hexagonal boron nitride (h-BN/graphene) and the trilayer system of
    hexagonal boron nitride encapsulated graphene (h-BN/graphene/h-BN).We extend the radiation-driven electron orbit model that was previously devised to study the same oscillations in 2D systems of Schrödinger electrons (GaAs/AlGaAS heterostructure) to the case of massive Dirac
    fermions. In the simulations we obtain clear oscillations for radiation frequencies in the terahertz and far-infrared bands.We investigate also the power and temperatures dependence. For the former we obtain similar results as for Schrödinger electrons and predict the rise of zero resistance states. For the latter we obtain a similar qualitatively dependence but quantitatively different when increasing temperature. While in GaAs the oscillations are wiped out in a few degrees, interestingly enough, for massive Dirac fermions, we obtain observable oscillations for temperatures above 100 K and even at room temperature for the higher frequencies used in the simulations.


  • graphene; magnetotransport; terahertz radiation; zero resistance states