Study on improvement of the performance parameters of a novel 0.41-0.47 THz on-chip antenna based on metasurface concept realized on 50 mum GaAs-layer

A feasibility study is presented on the performance parameters of a novel on-chip antenna based on metasurface technology at terahertz band. The proposed metasurface on-chip antenna is constructed on an electrically thin high-permittivity gallium arsenide (GaAs) substrate layer. Metasurface is implemented by engraving slot-lines on an array of 11 × 11 circular patches fabricated on the top layer of the GaAs substrate and metallic via-holes implemented in the central patch of each row constituting the array, which connects the patch to the leaky-wave open-ended feeding slot-lines running underneath the patches. The slot-lines are connected to each other with a slit. A waveguide port is used to excite the array via slot-lines that couple the electromagnetic energy to the patches. The metasurface on-chip antenna is shown to exhibit an average measured gain in excess of 10 dBi and radiation efficiency above 60% over a wide frequency range from 0.41 to 0.47 THz, which is significant development over other on-chip antenna techniques reported to date. Dimensions of the antenna are 8.6 × 8.6 × 0.0503 mm3. The results show that the proposed GaAs-based metasurface on-chip antenna is viable for applications in terahertz integrated circuits.

Study on improvement of the performance parameters of a novel 0.41-0.47 THz on-chip antenna based on metasurface concept realized on 50 mum GaAs-layer Articles