Study on improvement of the performance parameters of a novel 0.41¿0.47 THz on-chip antenna based on metasurface concept realized on 50 ¿m GaAs-layer Articles uri icon

authors

publication date

  • July 2020

issue

  • 1

volume

  • 10

International Standard Serial Number (ISSN)

  • 2045-2322

abstract

  • A feasibility study is presented on the performance parameters of a novel on-chip antenna based on metasurface technology at terahertz band. The proposed metasurface on-chip antenna is constructed on an electrically thin high-permittivity gallium arsenide (GaAs) substrate layer. Metasurface is implemented by engraving slot-lines on an array of 11 × 11 circular patches fabricated on the top layer of the GaAs substrate and metallic via-holes implemented in the central patch of each row constituting the array, which connects the patch to the leaky-wave open-ended feeding slot-lines running underneath the patches. The slot-lines are connected to each other with a slit. A waveguide port is used to excite the array via slot-lines that couple the electromagnetic energy to the patches. The metasurface on-chip antenna is shown to exhibit an average measured gain in excess of 10 dBi and radiation efficiency above 60% over a wide frequency range from 0.41 to 0.47 THz, which is significant development over other on-chip antenna techniques reported to date. Dimensions of the antenna are 8.6 × 8.6 × 0.0503 mm3. The results show that the proposed GaAs-based metasurface on-chip antenna is viable for applications in terahertz integrated circuits. © 2020, The Author(s).