High-Gain On-Chip Antenna Design on Silicon Layer with Aperture Excitation for Terahertz Applications Articles uri icon

publication date

  • July 2020

start page

  • 1576

end page

  • 1580


  • 9


  • 19

International Standard Serial Number (ISSN)

  • 1536-1225

Electronic International Standard Serial Number (EISSN)

  • 1548-5757


  • This letter investigates the feasibility of designing a high gain on-chip antenna on silicon technology for subterahertz applications over a wide-frequency range. High gain is achieved by exciting the antenna using an aperture fed mechanism to couple electromagnetics energy from a metal slot line, which is sandwiched between the silicon and polycarbonate substrates, to a 15-element array comprising circular and rectangular radiation patches fabricated on the top surface of the polycarbonate layer. An open ended microstrip line, which is orthogonal to the metal slot-line, is implemented on the underside of the silicon substrate. When the open ended microstrip line is excited it couples the signal to the metal slot-line which is subsequently coupled and radiated by the patch array. Measured results show the proposed on-chip antenna exhibits a reflection coefficient of less than-10 dB across 0.290-0.316 THz with a highest gain and radiation efficiency of 11.71 dBi and 70.8%, respectively, occurred at 0.3 THz. The antenna has a narrow stopband between 0.292 and 0.294 THz. The physical size of the presented subterahertz on-chip antenna is 20 × 3.5 × 0.126 mm3. © 2002-2011 IEEE.


  • coupling feeding mechanism high gain silicon technology terahertz (thz) on-chip antenna terahertz applications wide-frequency range antenna arrays microstrip lines polycarbonates silicon compounds substrates terahertz waves electromagnetics measured results polycarbonate substrates radiation efficiency silicon substrates silicon technologies terahertz applications wide frequency range slot antennas