Study of high In-content AlInN deposition on p-Si(111) by RF-sputtering Articles uri icon

authors

  • NUÑEZ CASCAJERO, ARANTZAZU
  • Monteagudo Lerma, L
  • VALDUEZA FELIP, S.
  • Navío, C
  • Monroy, E
  • González Herráez, M.
  • NARANJO, F. B.

publication date

  • April 2016

start page

  • 05FB07-1

end page

  • 05FB07-4

issue

  • 5s

volume

  • 55

International Standard Serial Number (ISSN)

  • 0021-4922

Electronic International Standard Serial Number (EISSN)

  • 1347-4065

abstract

  • In this work, we investigate the effects of deposition conditions on the structural and morphological properties of AlInN thin films deposited on p-doped Si(111) substrates by reactive radio-frequency sputtering. The aluminum composition can be tuned in the 0 to 0.36 range by changing the power applied to the aluminum target. Al incorporation leads to a change in the layer morphology and improvement of the rms surface roughness of the layers. The compact Al0.36In0.64N sample grown at 550 °C exhibits intense room-temperature photoluminescence centered at 1.75 eV.

subjects

  • Electronics