Quality improvement of AlInN/p-Si heterojunctions with AlN buffer layer deposited by RF-sputtering Articles

authors

NUÑEZ CASCAJERO, ARANTZAZU
VALDUEZA FELIP, S.
BLASCO, R.
DE LA MATA, M.
MOLINA, S.L.
González Herráez, M.
Monroy, E
NARANJO, F. B.

published in

Journal of Alloys and Compounds Journal

publication date

November 2018

start page

824

end page

830

volume

769

Digital Object Identifier (DOI)

https://doi.org/10.1016/j.jallcom.2018.08.059

International Standard Serial Number (ISSN)

0925-8388

Electronic International Standard Serial Number (EISSN)

1873-4669

keywords

iii-nitrides; alinn; aln buffer; rf-sputtering; characterization; photovoltaics