Effect of different buffer layers on the quality of InGaN layers grown on Si Articles uri icon

authors

  • GOMEZ, V. J.
  • GRANDAL, J.
  • NUĂ‘EZ CASCAJERO, ARANTZAZU
  • NARANJO, F. B.
  • VARELA, M.
  • SANCHEZ GARCIA, M. A.
  • CALLEJA, E.

publication date

  • October 2018

issue

  • 10

volume

  • 8

International Standard Serial Number (ISSN)

  • 2158-3226

keywords

  • epitaxy; heterostructures; nanomaterials; electrical conduction; semiconductor materials