Effect of different buffer layers on the quality of InGaN layers grown on Si Articles uri icon

authors

  • GOMEZ, V. J.
  • GRANDAL, J.
  • NUÑEZ CASCAJERO, ARANTZAZU
  • VARELA, M.
  • SANCHEZ GARCIA, M. A.
  • CALLEJA, E.
  • NARANJO, F. B.

publication date

  • October 2018

issue

  • 10

volume

  • 8

Electronic International Standard Serial Number (EISSN)

  • 2158-3226

subjects

  • Electronics
  • Telecommunications

keywords

  • epitaxy; heterostructures; nanomaterials; electrical conduction; semiconductor materials