Influence of the AlN interlayer thickness on the photovoltaic properties of In-rich AlInN on Si heterojunctions deposited by RF sputtering Articles uri icon

authors

  • VALDUEZA FELIP, S.
  • NUÑEZ CASCAJERO, ARANTZAZU
  • BLASCO, R.
  • MONTERO, D.
  • Grenet, L.
  • DE LA MATA, M.
  • FERNANDEZ, S.
  • RODRIGUEZ DE MARCOS, L.
  • Molina, S. I.
  • OLEA, J.
  • NARANJO, F. B.

publication date

  • November 2018

issue

  • 8

Electronic International Standard Serial Number (EISSN)

  • 2158-3226

keywords

  • silicon; sputter deposition; diode; optoelectronic properties; semiconductors; nitrides; solar cells; electrical properties and parameters; crystallography