Comparison of Ti/Pd/Ag, Pd/Ti/Pd/Ag and Pd/Ge/Ti/Pd/Ag contacts to n-type GaAs for electronic devices handling high current densities Articles uri icon

publication date

  • April 2017


  • 4


  • 32

International Standard Serial Number (ISSN)

  • 0268-1242

Electronic International Standard Serial Number (EISSN)

  • 1361-6641


  • In the quest for metal contacts for electronic devices handling high current densities, we report the results of Pd/Ti/Pd/Ag and Pd/Ge/Ti/Pd/Ag contacts to n-GaAs and compare them to Ti/Pd/Ag and AuGe/Ni/Au. These metal systems have been designed with the goal of producing an electrical contact with (a) low metal-semiconductor specific contact resistance, (b) very high sheet conductance, (c) good bondability, (d) long-term durability and (e) cost-effectiveness. The structure of the contacts consists of an interfacial layer (either Pd or Pd/Ge) intended to produce a low metal-semiconductor specific contact resistance; a diffusion barrier (Ti/Pd) and a thick top layer of Ag to provide the desired high sheet conductance, limited cost and good bondability. The results show that both systems can achieve very low metal resistivity (rho(M) similar to 2 x 10(- 6) Omega cm), reaching values close to that of pure bulk silver. This fact is attributed to the Ti/Pd bilayer acting as an efficient diffusion barrier, and thus the metal sheet resistance can be controlled by the thickness of the deposited silver layer. Moreover, the use of Pd as interfacial layer produces contacts with moderate specific contact resistance (rho C similar to 10(-4) Omega cm(2)) whilst the use of Pd/Ge decreases the specific contact resistance to rho(C) similar to 1.5. x. 10(-7) Omega cm(2), as a result of the formation of a Pd-4(GaAs, Ge-2) compound at the GaAs interface.


  • ohmic contact; n-gaas; high conductivity