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Millimeter wave radiation-induced magnetoresistance oscillations are examined in the GaAs/AlGaAs 2D electron system under bichromatic excitation in order to study the evolution of the oscillatory diagonal magnetoresistance, R-xx as the millimeter wave intensity is changed systematically for various frequency combinations. The results indicate that at low magnetic fields, the lower frequency millimeter wave excitation sets the observed R-xx response, as the higher frequency millimeter wave component determines the R-xx response at higher magnetic fields. The observations are qualitatively explained in terms of the order of the involved transitions. The results are also modeled using the radiation-driven electron orbit theory.
zero-resistance states; microwave-radiation; heterostructures; photoexcitation; devices; driven; gas