Millimeter wave radiation-induced magnetoresistance oscillations in the high quality GaAs/AlGaAs 2D electron system under bichromatic excitation Articles uri icon

authors

  • GUNAWARDANA, B.
  • LIU, H. C.
  • SAMARAWEERA, R. L.
  • HEIMBECK, M. S.
  • EVERITT, H. O.
  • IÑARREA LAS HERAS, JESUS
  • REICHL, C.
  • WEGSCHEIDER, W.
  • MANI, R. G.

publication date

  • May 2017

issue

  • 19

volume

  • 95

International Standard Serial Number (ISSN)

  • 2469-9950

Electronic International Standard Serial Number (EISSN)

  • 2469-9969

abstract

  • Millimeter wave radiation-induced magnetoresistance oscillations are examined in the GaAs/AlGaAs 2D electron system under bichromatic excitation in order to study the evolution of the oscillatory diagonal magnetoresistance, R-xx as the millimeter wave intensity is changed systematically for various frequency combinations. The results indicate that at low magnetic fields, the lower frequency millimeter wave excitation sets the observed R-xx response, as the higher frequency millimeter wave component determines the R-xx response at higher magnetic fields. The observations are qualitatively explained in terms of the order of the involved transitions. The results are also modeled using the radiation-driven electron orbit theory.

keywords

  • zero-resistance states; microwave-radiation; heterostructures; photoexcitation; devices; driven; gas