Linear polarization study of microwave-radiation-induced magnetoresistance oscillations: Comparison of power dependence to theory Articles uri icon

publication date

  • July 2016

issue

  • 3

volume

  • 94

International Standard Serial Number (ISSN)

  • 2469-9950

Electronic International Standard Serial Number (EISSN)

  • 2469-9969

abstract

  • We present an experimental study of the microwave power and the linear polarization angle dependence of the microwave-induced magnetoresistance oscillations in the high-mobility GaAs/AlGaAs two-dimensional electron system. Experimental results show the sinusoidal dependence of the oscillatory magnetoresistance extrema as a function of the polarization angle. Yet, as the microwave power increases, the angular dependence includes additional harmonic content, and it begins to resemble the absolute value of the cosine function. We present a theory to explain such peculiar behavior.

keywords

  • zero resistance states; 2-dimensional electron system; gaas/algaas heterostructures; photoexcitation; gas