Radiation-induced resistance oscillations in a 2D hole gas: a demonstration of a universal effect Articles uri icon

publication date

  • October 2015


  • 41


  • 27

International Standard Serial Number (ISSN)

  • 0953-8984

Electronic International Standard Serial Number (EISSN)

  • 1361-648X


  • We report on a theoretical study about the microwave-induced resistance oscillations and zero resistance states when dealing with p-type semiconductors and holes instead of electrons. We consider a high-mobility two-dimensional hole gas hosted in a pure Ge/SiGe quantum well. Similarly to electrons we obtain radiation-induced resistance oscillations and zero resistance states. We analytically deduce a universal expression for the irradiated magnetoresistance, explaining the origin of the minima positions and their 1/4 cycle phase shift. The outcome is that these phenomena are universal and only depend on radiation and cyclotron frequencies. We also study the possibility of having simultaneously two different carriers driven by radiation: light and heavy holes. As a result the calculated magnetoresistance reveals an interference profile due to the different effective masses of the two types of carriers.


  • electromagnetic-wave excitation; 2-dimensional electron-system; semiconductor double-barrier; gaas/algaas heterostructures; states; photoexcitation; driven; field