Size-controlled Ge nanostructures for enhanced Er3+ light emission Articles uri icon

authors

  • MARTIN-SANCHEZ, JAVIER
  • Serna, Rosalía
  • TOUDERT, J.
  • ALEN, BENITO
  • BALLESTEROS PEREZ, CARMEN INES

publication date

  • August 2014

start page

  • 4691

end page

  • 4694

issue

  • 16

volume

  • 39

International Standard Serial Number (ISSN)

  • 0146-9592

Electronic International Standard Serial Number (EISSN)

  • 1539-4794

abstract

  • The potential of Ge nanoparticles (NPs) embedded in Al 2 O 3 with tunable effective optical bandgap values in the range of 1.0&-3.3 eV to induce enhanced Er 3+ light emission is investigated. We demonstrate nonresonant indirect excitation of the Er 3+ ions mediated by the Ge NPs at room temperature. Efficient Er 3+ light emission enhancement is obtained for Ge NPs with large effective optical bandgaps in the range of 1.85 to 2.8 eV. The coupled Ge NP&-Er emission shows a negligible thermal quenching from 10 K to room temperature that is related to Er 3+ de-excitation through thermally activated defect states.