Effect of annealing atmosphere in the properties of GaAs layers deposited by sputtering techniques on Si substrates Articles uri icon

publication date

  • January 2014

start page

  • 134

end page

  • 139


  • 1


  • 25

International Standard Serial Number (ISSN)

  • 0957-4522


  • This work reports changes in the structural properties of sputtered GaAs layers deposited on Si (100) substrates induced by thermal annealing under different arsine atmospheres. The effects of the AsH3 partial pressure (PAsH3) and of the annealing temperature in the GaAs layer properties were analyzed by means of in situ reflectance spectroscopy, in situ transient reflectance at 2.65 eV, X-ray diffraction and atomic force microscopy. The results obtained reveal a direct correlation between the AsH3 partial pressure and the evolution of the GaAs surface morphology as well as the annihilation of As clusters formed during the sputtering procedure. © Springer Science+Business Media New York 2013.


  • annealing temperatures; effect of annealing; reflectance spectroscopy; si (100) substrate; si substrates; sputtering techniques; thermal-annealing; transient reflectance; annealing; atomic force microscopy; gallium arsenide; silicon; x ray diffraction; semiconducting gallium