Frequency, power and temperature dependence of the off-resonance magnetoresistance spike in irradiated 2D-electron systems Articles uri icon

publication date

  • August 2013

start page

  • 54

end page

  • 58

volume

  • 52

International Standard Serial Number (ISSN)

  • 1386-9477

Electronic International Standard Serial Number (EISSN)

  • 1873-1759

abstract

  • We present calculated results on frequency, power and temperature dependence of the recently discovered giant radiation-induced off-resonance magnetoresistance spike obtained in ultraclean two-dimensional electron systems. This spike shows up on the second harmonic of the cyclotron resonance. We apply the radiation-driven electron orbit model to this novel ultraclean scenario. In agreement with experiments, we obtain that the spike intensity is strongly dependent on temperature and radiation power. On the other hand, the spike position is mainly dependent on radiation frequency. These results would be of special interest from the application perspective, such as nanophotonics, ultrasensitive microwave detectors or solar cells given the strong translation of radiation energy into electrical current.

keywords

  • microwaves; magnetoresistance spikes; electron transport; zero resistance states; electromagnetic-wave excitation; semiconductor double-barrier; gaas/algaas heterostructures