Influence of linearly polarized radiation on magnetoresistance in irradiated two-dimensional electron systems. Articles uri icon

publication date

  • July 2012


  • 24


  • 100

International Standard Serial Number (ISSN)

  • 0003-6951

Electronic International Standard Serial Number (EISSN)

  • 1077-3118


  • We study the influence of the polarization angle of linear radiation on the radiation-induced magnetoresistance oscillations in two-dimensional electron systems and examine the polarization immunity on the temperature and quality of the sample. We have applied the radiation-driven electron orbits model obtaining that the magnetoresistance is affected by the orientation of the electric field of linearly polarized radiation when dealing with high quality samples and low temperatures. Yet, for lower quality samples and higher temperature, we recover polarization immunity in the radiation driven magnetoresistance oscillations. This could be of interest for future photoelectronics in high quality mesoscopic devices.